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Spin Transfer Technologies and Tokyo Electron Join Forces to Bring MRAM to the Next Level

SRAM-like ST-MRAM Brings Significant Cost and Power Benefits over Conventional SRAM FREMONT, Calif. and TOKYO – October 16, 2017 — Spin Transfer Technologies, Inc. (STT) and Tokyo Electron Ltd. (TEL) are pleased to announce that [...]

Spin Transfer Technologies $22.8 million convertible bridge facility and update on technology

STT secures $22.8 million convertible bridge facility and provides update on MRAM market and proprietary technologies Proceeds to fund development of commercial grade ST-MRAM with specifications consistent with requirements to replace existing SRAM and DRAM [...]

Spin Transfer Technologies Appoints Industry Veteran Andrew J. Walker to Vice President of Product

FREMONT, Calif. – September 8, 2017 — Spin Transfer Technologies, Inc. (STT), a leading developer of high-speed, high-endurance MRAM technology, today announced the appointment of Andrew J. Walker as Vice President of Product. With more [...]

Spin Transfer Technologies Samples Fully Functional ST-MRAM Devices

Initially Targeted for Embedded Non-volatile Memory Applications FREMONT, Calif. – January 25, 2017 — Spin Transfer Technologies, Inc. (STT), a leading developer of breakthrough Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM™), today announced [...]

Spin Transfer Technologies CEO Describes New Tier of Nanosecond-class Persistent Memories for Better System Performance and Power at Persistent Memory Summit 2017

WHAT: Barry Hoberman, CEO of Spin Transfer Technologies (STT), describes how ST-MRAM will enable a new tier of persistent memory —nanosecond-class persistent memories—during a panel session at this year’s Persistent Memory Summit. Today, most [...]

Spin Transfer Technologies Develops 20nm Magnetic Tunnel Junction MRAM Technology at On-site R&D Fab

Startup Moves to Commercialization Phase, Initiates Sampling Program FREMONT, Calif. — September 27, 2016 — Spin Transfer Technologies, Inc. (STT), a leading developer of breakthrough Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM™), today announced it [...]