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Spin Transfer Technologies Announces Breakthrough MRAM Technology for SRAM and DRAM Applications

– Precessional Spin Current™ Structure Provides 40-70 Percent Boost to Spin-torque Efficiency of Any pMTJ — Improving Data Retention by Over 10,000 Times While Reducing Write Current –
April 30, 2018

Silicon Valley Startup Set to Disrupt Global Semiconductor Market

– Spin Transfer Technologies Precessional Spin Current™ Structure Positions MRAM as the Leading Memory for Mobile, Datacenters, AI and More –
April 30, 2018

Spin Transfer Technologies to Discuss Enhanced STT-MRAM Efficiency Utilizing Precessional Spin Current™ at Intermag

April 19, 2018

Spin Transfer Technologies to Discuss Unleashing MRAM as Persistent Memory at SEMICON China 2018

March 8, 2018

Spin Transfer Technologies to Discuss Unleashing MRAM as Persistent Memory at the 2018 Persistent Memory Summit

January 24, 2018

Spin Transfer Technologies Announces Allowance of U.S. Patent For Next-Gen MRAM

– Precessional Spin Current provides faster switching times and better stability of data –
November 14, 2017