January 18, 2017
|WHAT:||Barry Hoberman, CEO of Spin Transfer Technologies (STT), describes how ST-MRAM will enable a new tier of persistent memory —nanosecond-class persistent memories—during a panel session at this year’s Persistent Memory Summit. Today, most talk about persistent memory is around storage-class memories that create a new tier residing between DRAM and flash in terms of performance and cost. Spin Transfer Technologies believes that nanosecond-class persistent memories will combine the density and byte-addressability of DRAM with faster cycle times and persistence.
Mr. Hoberman will detail how this additional tier of nanosecond-class persistent memories provide the opportunity for improving performance, reducing power, and enabling new capabilities to systems and software.
Session: Enabling Nanosecond-Class Storage followed by:
Additionally, Spin Transfer Technologies will demonstrate its MRAM technology during the summit.
|WHEN:||January 18, 2017|
|WHERE:||Westin Hotel – San Jose, California|
About Spin Transfer Technologies
Spin Transfer Technologies, Inc. was established by Allied Minds and New York University to develop and commercialize its Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology, OST-MRAM™. The technology, invented by Professor Andrew Kent, is a disruptive innovation in the field of spin-transfer-based MRAM devices, enabling faster switching times, lower power operation, lower manufactured device cost and scalability to smaller lithographic dimensions. For more information, visit www.spintransfer.com.
The Hoffman Agency